Publication: Dependence of a-Si:H density of states on hydrogen content: modeling and experiment
All || By Area || By Year| Title | Dependence of a-Si:H density of states on hydrogen content: modeling and experiment | Authors/Editors* | F. Gaspari, I. M. Kupchak, A. I. Shkrebtii, Z. Ibrahim, A. Kazakevitch |
|---|---|
| Where published* | Proceedings of 33rd IEEE Photovoltaic Specialists Conference (San Diego, USA, May 11â16, 2008) |
| How published* | Proceedings |
| Year* | 2009 |
| Volume | |
| Number | |
| Pages | 206 |
| Publisher | |
| Keywords | |
| Link | |
| Abstract |
The dependence of the density of states (DOS) in the gap of hydrogenated amorphous silicon (a-Si:H) on hydrogen content is analyzed theoretically by ab-initio Molecular Dynamics (AIMD) and DFT LDA (for optics). Initial results indicate that we can follow the changes in the DOS with different bonding configuration. Experimental verification of this analysis was commenced using the Constant Photocurrent Method (CPM) and Isothermal Capacitance Transient Spectroscopy (ICTS) on samples grown by the Saddle Field Glow Discharge technique, which allows us to control the nature of the Hydrogen bonding in the amorphous silicon matrix |
Back to page 37 of list