Publication: Significant Enhancement of Hole Mobility in [110] Silicon Nanowires Compared to Electrons and Bulk Silicon

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Title	Significant Enhancement of Hole Mobility in [110] Silicon Nanowires Compared to Electrons and Bulk Silicon
Authors/Editors*	Buin, A. K.; Verma, A.; Svizhenko, A.; Anantram, M. P.
Where published*	Nano Letters
How published*	Journal
Year*	2008
Volume	8
Number	760
Pages	5
Publisher
Keywords
Link	http://pubs.acs.org/cgi-bin/abstract.cgi/nalefd/2008/8/i02/abs/nl0727314.html
Abstract	Utilizing sp3d5s* tight-binding band structure and wave functions for electrons and holes we show that acoustic phonon limited hole mobility in [110] grown silicon nanowires (SiNWs) is greater than electron mobility. The room temperature acoustically limited hole mobility for the SiNWs considered can be as high as 2500 cm2/V s, which is nearly three times larger than the bulk acoustically limited silicon hole mobility. It is also shown that the electron and hole mobility for [110] grown SiNWs exceed those of similar diameter [100] SiNWs, with nearly 2 orders of magnitude difference for hole mobility. Since small diameter SiNWs have been seen to grow primarily along the [110] direction, results strongly suggest that these SiNWs may be useful in future electronics. Our results are also relevant to recent experiments measuring SiNW mobility.